3LN01SS no.6546-1/4 features low on-resistance. ultrahigh-speed switching. 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.15 a drain current (pulse) i dp pw 10 s, duty cycle 1% 0.6 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =80ma 0.15 0.22 s r ds (on)1 i d =80ma, v gs =4v 2.9 3.7 ? static drain-to-source on-state resistance r ds (on)2 i d =40ma, v gs =2.5v 3.7 5.2 ? r ds (on)3 i d =10ma, v gs =1.5v 6.4 12.8 ? input capacitance ciss v ds =10v, f=1mhz 7.0 pf output capacitance coss v ds =10v, f=1mhz 5.9 pf reverse transfer capacitance crss v ds =10v, f=1mhz 2.3 pf marking : ya continued on next page. ordering number : en6546a 72606 / 32406pe ms im tb-00002158 / 52200 ts im ta-1986 3LN01SS n-channel silicon mosfet general-purpose switching device applications sanyo semiconductors d ata sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. http://semicon.sanyo.com/en/network
3LN01SS no.6546-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 65 ns t urn-off delay time t d (off) see specified test circuit. 155 ns fall time t f see specified test circuit. 120 ns t otal gate charge qg v ds =10v, v gs =10v, i d =150ma 1.58 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =150ma 0.26 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =150ma 0.31 nc diode forward voltage v sd i s =150ma, v gs =0v 0.87 1.2 v package dimensions switching time test circuit unit : mm 7029-003 0.6 0.25 0.2 0.07 0.07 1.4 0.45 1 3 2 0.3 0.3 1.4 0.8 0.1 2 3 1 top view bottom view 1 : gate 2 : source 3 : drain sanyo : ssfp pw=10 s d.c. ) 1% 4v 0v v in p. g 50 1 g s d i d =80ma r l =187.5 1 v dd =15v v out 3LN01SS v in gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it00029 it00030 0 0 0.02 0.2 0.06 0.04 0.08 0.4 0.10 0.12 0.14 0.16 0.6 0.8 1.0 v gs =1.5v 2.0v 2.5v 4.0v 3.5v 3.0v 6.0v 0 0 0.5 1.0 1.5 2.0 0.15 0.10 0.05 0.30 0.25 0.20 2.5 3.0 v ds =10v t a= --25 c t a=75 c 25 c 25 c 75 c -- 2 5 c
3LN01SS no.6546-3/4 0.01 0.6 0.5 0.8 0.7 0.9 1.0 1.1 1.2 0.1 1.0 7 5 3 2 7 5 3 2 v gs =0v - -25 c 25 c ta=75 c 0.01 10 0.1 23 57 2 1000 100 7 5 3 2 7 5 3 2 v dd =15v v gs =4v t d (on) t r t f t d (off) - -60 0 - -40 --20 1 020 2 40 60 3 4 5 6 7 80 100 120 140 160 i d =40ma, v gs =2.5v i d =80ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 0.1 7 5 3 2 7 5 3 2 1.0 5 v ds =10v 75 c t a= --25 c 25 c 0.01 0.1 23 57 23 10 1.0 7 5 3 2 5 v gs =2.5v 0.001 1.0 0.01 23 57 23 100 10 7 5 3 2 7 5 3 2 5 v gs =1.5v ta =75 c 25 c - -25 c - -25 c 25 c ta=75 c diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a sw time -- i d switching time, sw time -- ns it00037 it00038 drain current, i d -- a forward transfer admittance, yfs -- s yfs -- i d ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- 1 it00035 it00036 drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- 1 drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- 1 it00033 it00034 drain current, i d -- a r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- 1 gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- 1 it00031 it00032 0 0 12 1 34 2 56 3 4 5 6 7 8 9 10 78 910 ta=25 c 0.01 0.1 23 57 23 10 7 5 3 2 1.0 5 25 c - -25 c ta=75 c v gs =4v 80ma i d =40ma
3LN01SS no.6546-4/4 ps p d -- ta it01964 ambient temperature, ta -- c allowable power dissipation, p d -- w 0204 060 100 120 140 0 80 0.1 0.15 0.2 0.05 160 0246810 12 14 16 18 20 1.0 10 7 5 3 2 7 5 3 2 100 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =150ma v gs -- q g gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it00039 it00040 t otal gate charge, qg -- nc note on usage : since the 3LN01SS is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of march, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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